Automatic TSV (Through Silicon Via) / Deep Trench inspection system ViaMaster A200

System Model

ViaMaster A200

Wafer Size

12 in.

Inspection Items*

• TSV depth (Max. Aspect Ratio 30 with Horus Module),
• CD (3σ < 0.5 µm),
• Step height (3σ < 0.01 µm@10 µm), Wafer profile (3σ < 0.15 µm),
  Wafer bow / warp (max. 1 mm);
• Film thickness (100 nm~ 30 µm, 3σ < 1 nm@500 nm film),
• Wafer thickness (Max. 780 µm, 3σ < 0.01 µm@780 µm wafer),
• 3D map visualization

Light Source

LED & wide band lighting

Working Distance (for multi lens)

Min. 12 mm, Max. 65 mm

Lens and Sensors*

4X, 20X (or other selections), confocal sensor, film thickness sensor. wafer thickness sensor, tilt sensor (optional).

Chuck

Ceramic chuck with motorized wafer lift pins

Air

VAC -80 kPa，CDA 5~7 kg/cm^2

System Configuration

XYZ (450 mm x 350 mm x 60 mm) with linear scales 1 µm resolution,
3-axis tilt stage (1° 1° 4°)(optional)

Electrostatic Discharger

600 mm

Cleanliness Requirement

Class 100

Networking

SECS/GEM

Main Controller

Windows 11 with height-speed USB, 4-port GbE card

System Power

220VAC

Safety Compatibility

SEMI S2